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Home > News & Events >Release of High-Speed Discrete IGBT "High-Speed W Series"

News Release
December 16, 2015
Fuji Electric Co., Ltd.

Release of High-Speed Discrete IGBT "High-Speed W Series"

  December 16, 2015 - Fuji Electric Co., Ltd. (TSE:6504) (“FE”), headquartered in Tokyo, Japan, led by President Michihiro Kitazawa, is pleased to announce that it will release the high-speed discrete IGBT* "High-Speed W Series" as a line of new power semiconductor products.

  *Discrete: a single-function semiconductor device such as a transistor or diode
    IGBT: Insulated Gate Bipolar Transistor

1. Background
  Power semiconductors, which are mounted on industrial equipment such as inverters, uninterruptible power systems and power conditioners, electric and hybrid vehicles, and communications devices, are a key device in the realization of energy conservation and a stable power supply.
  The size of the market for the industrial and communications equipment where discrete IGBTs are used is estimated to reach approximately 50 billion yen in 2016 and subsequently grow at an annual rate of 5% (source: IMS).
  As the demand for energy has been expanding globally in recent years, there is a growing need for the energy-saving performance of such industrial and communications equipment. There is also a strong demand for downsizing and space-saving of the equipment themselves.
  We are now releasing high-speed discrete IGBT products that meet these market needs.

2. Product Features
(1) Contributes to energy conservation by reducing power loss
  Power semiconductors repeatedly perform rapid switching (turning electricity on and off) to convert DC to AC or control voltage. The new product series has made the IGBT chip thinner for miniaturization, thereby reducing power loss (turnoff loss) in switching operation by approximately 40% compared to conventional products (High-Speed V Series). This contributes to energy saving and power cost reduction of the devices on which to mount the products.

(2) Realizes downsizing of devices
  Loss in switching operation has been reduced (heat generation suppressed) to realize compatibility with higher switching frequencies* (20 to 100 kHz) compared to conventional products (around 20 kHz).
This makes it possible to downsize the peripheral parts (coils and transformers) of the devices on which to mount the products, and contributes to the downsizing of the equipment itself and total cost reduction.

*Number of on-off switches per second

High-Speed W Series appearance

High-Speed W Series appearance

3. Product Specifications and Timing of Release

Rated voltage Rated current Timing of release
650V 40A, 50A, 60A December 2015
1,200V 25A, 40A September 2015

4. Product Inquiries
  Semiconductor Sales Department, Fuji Electric Asia Pacific Pte. Ltd.
  Telephone: +65-6533-0014

Reference: Lineup and major specifications
Rated voltage Rated current Part number Anti-parallel Diode Package type
650 V 40 A FGW40N65W No TO-247
FGW40N65WD Yes
50 A FGW50N65W No
FGW50N65WD Yes
60 A FGW60N65W No
FGW60N65WD Yes
1,200 V 25 A FGW25N120W No
FGW25N120WD Yes
40 A FGW40N120W No
FGW40N120WD Yes

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